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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET - Synthesis Lectures on Emerging Engineering Technologies Nabil Shovon Ashraf
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Explores device parameters such as channel inversion carrier mobility and its characteristic evolution. This book is the first to illustrate that a single subthreshold slope value is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold.
89 pages
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 13 de julio de 2018 |
| ISBN13 | 9781681733876 |
| Editores | Morgan & Claypool Publishers |
| Páginas | 89 |
| Dimensiones | 150 × 220 × 20 mm · 825 g |
| Editor de series | Iniewski, Kris |
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